BTS244Z E3062A

Speed TEMPFET BTS244Z Speed TEMPFET® ® N-Channel Enhancement mode 1 Logic Level Input Analog driving possible 5 PG-TO220-5-62 Fast switching up to 1 MHz PG-TO220-5-3 Potential-free temperature sensor with thyristor characteristics Overtemperature protection •Green Product (RoHS Compliant) •AEC Qualified Avalanche rated Type BTS 244 Z VDS 55 V RDS(on) Package 13 m PG-TO220-5-3 PG-TO220-5-43 PG-TO220-5-62 PG-TO-220-5-43 D Pin 3 and TAB G Pin 1 A Pin 2 Temperature Sensor K Pin 4 S Pin 5 Data Sheet Pin Symbol Function 1 G Gate 2 A Anode Temperature Sensor 3 D Drain 4 K Cathode Temperature Sensor 5 S Source 1 Rev.1.3, 2009-12-04 Speed TEMPFET BTS244Z Maximum Ratings Parameter Symbol Drain source voltage VDS V 55 Gate source voltage VGS 20 Nominal load current (ISO 10483) ID(ISO) Drain-gate voltage, RGS = 20 k DGR Value Unit V 55 A VGS = 4.5 V, VDS 0.5 V, TC = 85 °C 19 VGS = 10 V, VDS 0.5 V, TC = 85 °C 26 ID 35 Pulsed drain current ID puls 188 Avalanche energy, single pulse EAS 1.65 J Ptot 170 W -40 ...+175 °C Continuous drain current 1) TC = 100 °C, VGS = 4.5V ID = 19 A, RGS = 25 Power dissipation TC = 25 °C Operating temperature 2) Tj Peak temperature ( single event ) Tjpeak Storage temperature Tstg 200 -55 ... +150 DIN humidity category, DIN 40 040 E IEC climatic category; DIN IEC 68-1 40/150/56 1current limited by bond wire 2Note: Thermal trip temperature of temperature sensor is below 175°C Data Sheet 2 Rev.1.3, 2009-12-04 Speed TEMPFET BTS244Z Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics junction - case: RthJC - - 0.88 Thermal resistance @ min. footprint Rth(JA) - - 62 Thermal resistance @ 6 cm2 cooling area 1) Rth(JA) - 33 40 K/W Electrical Characteristics Symbol Parameter at Tj = 25°C, unless otherwise specified Values Unit min. typ. max. 55 - - ID = 130 μA 1.2 1.6 2 ID = 250 μA - 1.65 - Static Characteristics Drain-source breakdown voltage V(BR)DSS V VGS = 0 V, ID = 0.25 mA VGS(th) Gate threshold voltage, VGS = VDS IDSS Zero gate voltage drain current μA VDS = 50 V, VGS = 0 V, Tj = -40 °C - - 0.1 VDS = 50 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 50 V, VGS = 0 V, Tj = 150 °C - - 100 IGSS Gate-source leakage current nA VGS = 20 V, VDS = 0 V, Tj = 25 °C - 10 100 VGS = 20 V, VDS = 0 V, Tj = 150 °C - 20 100 RDS(on) Drain-Source on-state resistance m VGS = 4.5 V, ID = 19 A - 16 18 VGS = 10 V, ID = 19 A - 11.5 13 1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70μm thick) copper area for drain connection. PCB mounted vertical without blown air. Data Sheet 3 Rev.1.3, 2009-12-04 Speed TEMPFET BTS244Z Electrical Characteristics Parameter Symbol at Tj = 25°C, unless otherwise specified Values Unit min. typ. max. Dynamic Characteristics Forward transconductance gfs 25 - - S VDS>2*ID *RDS(on)max , ID = 35 A Input capacitance Ciss - 2130 2660 pF Coss - 600 750 Crss - 320 400 td(on) - 15 25 tr - 70 105 td(off) - 40 60 tf - 25 40 Qg(th) - 2.5 3.8 Qg(5) - 50 75 Qg(total) - 85 130 V(plateau) - 4.5 - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 30 V, VGS = 4.5 V, ID = 47 A, RG = 2.2 Rise time VDD = 30 V, VGS = 4.5 V, ID = 47 A, RG = 2.2 Turn-off delay time VDD = 30 V, VGS = 4.5 V, ID = 47 A, RG = 2.2 Fall time VDD = 30 V, VGS = 4.5 V, ID = 47 A, RG = 2.2 Gate Charge Characteristics Gate charge at threshold nC VDD = 40 V, ID = 0.1 A, VGS = 0 to 1 V Gate charge at 5.0 V VDD = 40 V, ID = 47 A, V GS = 0 to 5 V Gate charge total VDD = 40 V, ID = 47 A, V GS = 0 to 10 V Gate plateau voltage V VDD = 40 V, ID = 47 A Data Sheet 4 Rev.1.3, 2009-12-04 Speed TEMPFET BTS244Z Electrical Characteristics Symbol Parameter at Tj = 25°C, unless otherwise specified Values Unit min. typ. max. IS 35 - - IFM 188 - - VSD - 1.25 1.8 V trr - 110 165 ns Qrr - 0.23 0.35 μC Reverse Diode Inverse diode continuous forward current A TC = 25 °C Inverse diode direct current,pulsed TC = 25 °C Inverse diode forward voltage VGS = 0 V, IF = 94 A Reverse recovery time VR = 30 V, IF =IS, diF/dt = 100 A/μs Reverse recovery charge VR = 30 V, IF =IS, diF/dt = 100 A/μs Sensor Characteristics For temperature sensing, i.e. temperature protection, please consider application note "Temperature sense concept - Speed TEMPFET”. For short circuit protection please consider application note "Short circuit behaviour of the Speed TEMPFET family”. All application notes are available at http://www.infineon.com/tempfet/ VAK(on) Forward voltage V IAK(on) = 5 mA, Tj = -40...+150 °C - 1.3 1.4 IAK(on) = 1.5 mA, Tj = 150 °C - - 0.9 Sensor override - - 10 - - 5 - - 600 tP = 100 μs, Tj = -40...+150 °C IAK(on) Forward current mA Tj = -40...+150 °C Sensor override tP = 100 μs, Tj = -40...+150 °C Data Sheet 5 Rev.1.3, 2009-12-04 Speed TEMPFET BTS244Z Electrical Characteristics Parameter Symbol at Tj = 25°C, unless otherwise specified Values Unit min. typ. max. - - 4 μA 100 - - μs - - 150 Sensor Characteristics IAK(off) Temperature sensor leakage current Tj = 150 °C treset Min. reset pulse duration 1) Tj = -40...+150 °C, IAK(on) = 0.3 mA, VAK(Reset)